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參數(shù)資料
| 型號： | K6X8016T3B-TQ70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx16 bit Low Power Full CMOS Static RAM |
| 中文描述： | 512Kx16位低功耗的CMOS靜態(tài)RAM全部 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 128K |
| 代理商： | K6X8016T3B-TQ70 |
K6X8016T3B Family
Revision 1.0
September 2003
1
CMOS SRAM
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 44-TSOP2-400R package type.
Finalized
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 45mA to 30mA
- Changed I
SB
1
(industrial)
from 30
μ
A to 15
μ
A
- Changed I
SB
1
(Automotive)
from 40
μ
A to 25
μ
A
Draft Date
October 31, 2002
December 11, 2002
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
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