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參數(shù)資料
| 型號(hào)： | K6T4008C1C-GP55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K6T4008C1C-GP55 |
K6T4008C1B Family
CMOS SRAM
Revision 3.0
September 1998
3
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
K6T4008C1B-DL55
K6T4008C1B-DB55
K6T4008C1B-DL70
K6T4008C1B-DB70
K6T4008C1B-GL55
K6T4008C1B-GB55
K6T4008C1B-GL70
K6T4008C1B-GB70
K6T4008C1B-VB55
K6T4008C1B-VB70
K6T4008C1B-MB55
K6T4008C1B-MB70
32-DIP, 55ns, L-pwr
32-DIP, 55ns, LL-pwr
32-DIP, 70ns, L-pwr
32-DIP, 70ns, LL-pwr
32-SOP, 55ns, L-pwr
32-SOP, 55ns, LL-pwr
32-SOP, 70ns, L-pwr
32-SOP, 70ns, LL-pwr
32-TSOP2-F, 55ns, LL-pwr
32-TSOP2-F, 70ns, LL-pwr
32-TSOP2-R, 55ns, LL-pwr
32-TSOP2-R, 70ns, LL-pwr
K6T4008C1B-GP55
K6T4008C1B-GF55
K6T4008C1B-GP70
K6T4008C1B-GF70
K6T4008C1B-VF55
K6T4008C1B-VF70
K6T4008C1B-MF55
K6T4008C1B-MF70
32-SOP, 55ns, L-pwr
32-SOP, 55ns, LL-pwr
32-SOP, 70ns, L-pwr
32-SOP, 70ns, LL-pwr
32-TSOP2-F, 55ns, LL-pwr
32-TSOP2-F, 70ns, LL-pwr
32-TSOP2-R, 55ns, LL-pwr
32-TSOP2-R, 70ns, LL-pwr
FUNCTIONAL DESCRIPTION
1. X means don
′
t care.( Must be in low or high state.)
CS
OE
WE
I/O Pin
Mode
Power
H
X
1)
H
X
1)
H
High-Z
Deselected
Standby
L
High-Z
Output disbaled
Active
L
L
H
Dout
Read
Active
L
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to 7.0
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6T4008C1B-L/-B
-40 to 85
K6T4008C1B-P/-F
Soldering temperature and time
T
SOLDER
260
°
C, 10sec(Lead Only)
-
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6T4008C1C-L | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-P | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-VB70 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-VB70 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-VB55 | 512Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4008C1C-GP70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-MB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-MB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-MF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
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