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參數(shù)資料
| 型號(hào)： | K6T4008C1B-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K6T4008C1B-L |
K6T4008C1B Family
CMOS SRAM
Revision 3.0
September 1998
2
512Kx8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The K6T4008C1B families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up oper-
ation with low data retention current.
FEATURES
Process Technology: TFT
Organization: 512Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525
32-TSOP2-400F/R
PIN DESCRIPTION
Pin Name
Function
WE
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
A
0
~A
18
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6T4008C1B-L
Commercial (0~70
°
C
)
4.5~5.5V
55
1)
/70ns
100
μ
A
20
μ
A
80mA
32-DIP-600, 32-SOP-525
32-TSOP2-400F/R
K6T4008C1B-B
K6T4008C1B-P
Inderstrial (-40~85
°
C
)
100
μ
A
50
μ
A
32-SOP-525
32-TSOP2-400F/R
K6T4008C1B-F
FUNCTIONAL BLOCK DIAGRAM
32-DIP
32-SOP
32-TSOP2
(Forward)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Reverse)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A3
Precharge circuit.
Memory array
1024 rows
512
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A8 A13A17A15
A11
A10
A18
A16
A14
A12
A7
A6
A4
I/O
1
Data
cont
Data
cont
I/O
8
A5
A1
A0
A2
CS
WE
OE
Control
logic
相關(guān)PDF資料 |
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| K6T4008C1B-P | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-F | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-GF55 | 512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1C-GL55 | 512Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T4008C1B-MB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-MB70 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx8, 32 Pin, Plastic, TSOP |
| K6T4008C1B-MF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-MF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| K6T4008C1B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
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