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參數(shù)資料
| 型號(hào)： | K6T1008C2E-B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 190K |
| 代理商： | K6T1008C2E-B |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
2
128Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology: TFT
Organization: 128Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
GENERAL DESCRIPTION
The K6T1008C2E families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PIN DESCRIPTION
Name
Function
CS
1
, CS
2
Chip Select Input
OE
Output Enable Input
WE
Write Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
A
0
~A
16
Address Inputs
Vcc
Power
Vss
Ground
N.C.
No Connection
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
50
μ
A
10
μ
A
50
μ
A
15
μ
A
Operating
(I
CC2,
Max)
K6T1008C2E-L
Commercial(0~70
°
C)
4.5~5.5V
55
1)
/70ns
50mA
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
K6T1008C2E-B
K6T1008C2E-P
Industrial(-40~85
°
C)
32-SOP -525
32-TSOP1-0820F/R
K6T1008C2E-F
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
1
WE
OE
CS
2
Control
logic
A9
A8
A13
WE
A15
VNC
A16
A14
A12
A7
A6
A5
A4
OE
CS1
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-DIP
32-TSOP
32-SOP
Column Address
Raw
Address
A4
A5
A6
A7
A12
NC
A15
CS2
WE
A13
A8
A9
A11
A3
A2
A1
A0
I/O2
VSS
I/O4
I/O5
I/O6
I/O8
A10
OE
Type1-Reverse
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
32-TSOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6T1008C2E-DB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-F | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T1008C2E-DB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
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