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參數(shù)資料
| 型號(hào)： | K6F1008V2C-YF55 |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 128Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | K6F1008V2C-YF55 |
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
4
CAPACITANCE
1)
(f=1MHz, TA=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Typical values are measured at V
CC
=3.3V, T
A
=25
°
C and not 100% tested.
2. Super low power product=1
μ
A with special handling.
Item
Symbol
Test Conditions
Min Typ
1
Max Unit
-1
-
Input leakage current
I
LI
V
IN
=Vss to Vcc
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Average operating current
I
CC1
Cycle time=1
μ
s,
100%duty, I
IO
=0mA, CS
1
≤
0.2V, CS
2
≥
Vcc-0.2V, V
IN
≤
0.2V
or V
IN
≥
V
CC
-0.2V
-
-
3
mA
I
CC2
Cycle time=Min, 100% duty,
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IH
or V
IL
-
-
35
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(CMOS)
I
SB1
CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V or CS
2
≤
0.2V, Other inputs=0~Vcc
-
0.5
5
2)
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
Note :
1. T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot: Vcc+2.0V in case of pulse width
≤
20ns.
3. Undershoot: -2.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
3.0
3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.3
3)
-
0.6
V
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