- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374285 > K6F1008V2C-F (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K6F1008V2C-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 128Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | K6F1008V2C-F |
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
8
DATA RETENTION WAVE FORM
CS
1
controlled
V
CC
3.0V
2.2V
V
DR
CS
1
GND
Data Retention Mode
CS
1
≥
V
CC
- 0.2V
t
SDR
t
RDR
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS
2
Controlled)
Address
CS
1
t
AW
NOTES
(WRITE CYCLE)
1. A write occurs during the overlap of a low CS
1
, a high CS
2
and a low WE. A write begins at the latest transition among CS
1
going low,
CS
2
going high and WE going low : A write ends at the earliest transition among CS
1
going high, CS
2
going low and WE going high,
t
WP
is measured from the begining of write to the end of write.
2. t
CW
is measured from the CS
1
going low or from CS
2
going high to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end of write to the address change. t
WR1
is applied in case a write ends with CS
or WE going high and
t
WR2
is applied in case a write ends with CS
2
going low.
CS
2
t
CW(2)
WE
Data in
Data Valid
Data out
High-Z
High-Z
t
CW(2)
t
WR(4)
t
WP(1)
t
DW
t
DH
t
AS(3)
t
WC
CS
2
controlled
V
CC
3.0V
CS
2
0.4V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CS
2
≤
0.2V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6F1008V2C | 128*8 bit super low power and low voltage CMOS static RAM |
| K6F1008V2C-YF70 | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| K6F1616T6C-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C-FF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C-FF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1008V2C-YF55 | 制造商:Samsung Semiconductor 功能描述: |
| K6F1008V2C-YF55000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I Tube |
| K6F1008V2C-YF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| K6F1016U4B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1016U4B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。