參數(shù)資料
型號： K5A3380YTC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 8/45頁
文件大小： 625K
代理商： K5A3380YTC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 8 -
Preliminary
Flash MEMORY COMMAND DEFINITIONS
Flash memory operates by selecting and executing its operational modes. Each operational mode has its own command set. In order
to select a certain mode, a proper command with specific address and data sequences must be written into the command register.
Writing incorrect information which include address and data or writing an improper command will reset the device to the read mode.
The defined valid register command sequences are stated in Table 5. Note that Erase Suspend (B0H) and Erase Resume (30H)
commands are valid only while the Block Erase Operation is in progress.
Table 5. Command Sequences
Command Sequence
Cycle
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
6th Cycle
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Read
Addr
1
RA
Data
RD
Reset
Addr
1
XXXH
Data
F0H
Autoselect
Manufacturer
ID (2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA/
X00H
DA/
X00H
Data
AAH
55H
90H
ECH
Autoselect
Device Code
(2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA/
X01H
DA/
X02H
Data
AAH
55H
90H
(See Table 6)
Autoselect
Block Group
Protect Verify
(2,3)
Auto Select
Secode Block
Factory Protect
Verify (2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
BA /
X02H
BA/
X04H
Data
AAH
55H
90H
(See Table 6)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA /
X03H
DA/
X06H
Data
AAH
55H
90H
(See Table 6)
Enter Secode
Block Region
Addr
3
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
88H
Exit
Secode
Block
Region
Addr
4
555H
AAAH
2AAH
555H
555H
AAAH
XXXH
Data
AAH
55H
90H
00H
Program
Addr
4
555H
AAAH
2AAH
555H
555H
AAAH
PA
Data
AAH
55H
A0H
PD
Unlock Bypass
Addr
3
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
20H
Unlock Bypass
Program
Addr
2
XXXH
PA
Data
A0H
PD
Unlock Bypass
Reset
Addr
2
XXXH
XXXH
Data
90H
00H
Chip Erase
Addr
6
555H
AAAH
2AAH
555H
555H
AAAH
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
80H
AAH
55H
10H
Block Erase
Addr
6
555H
AAAH
2AAH
555H
555H
AAAH
555H
AAAH
2AAH
555H
BA
Data
AAH
55H
80H
AAH
55H
30H
Block Erase
Suspend (4, 5)
Addr
1
XXXH
Data
B0H
Block Erase
Resume
Addr
1
XXXH
Data
30H
相關(guān)PDF資料
PDF描述
K5A3X80YTC MCP MEMORY
K5T6432YT Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
K5 KS SERIES KEY SWITCHES
K5 Heatsink For stud devices
K6F1008V2C-YF55 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K5A3X40YTC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3X80YTC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY
K5AA111AAA 制造商:OTTO 功能描述:3-4 NONE OFF SPST 制造商:OTTO Engineering Inc 功能描述:W/OUT TERM BARRIERS
K5AA111AAA-ZZE3E4992 制造商:OTTO 功能描述:3-4 NONE OFF SPST 制造商:OTTO Engineering Inc 功能描述:W/OUT TERM BARR,SPST
K5AA111AAA-ZZL1ZZ9Z4 制造商:OTTO Engineering Inc 功能描述:SPST, ON-NONE-OFF,WHT, LIGHT LEGEND IN A, NO LED/LENS
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*