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參數(shù)資料
| 型號： | K4S643233F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| 中文描述： | 2Mx32移動SDRAM 90FBGA的CMOS內(nèi)存 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | K4S643233F |
K4S643233F-S(D)E/N/I/P
Rev. 1.5 Dec. 2002
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25
°
C to 85
°
C for Extended, -40
°
C to 85
°
C for Industrial)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S643233F-S(D)E/I**
4. K4S643233F-S(D)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
80
75
75
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.5
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
11
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
8
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
22
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
22
mA
Operating Current
I
CC4
I
O
= 0 mA ,Page burst
95
75
75
mA
1
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
135
120
120
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
-S(D)E/I
2
mA
3
-S(D)N/P
0.4
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643233H | Mobile-SDRAM |
| K4S643233H-C | Mobile-SDRAM |
| K4S643233H-F | Mobile-SDRAM |
| K4S643233H-F1H | Mobile-SDRAM |
| K4S643233H-F1L | Mobile-SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643233F-DE/P1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-DE/P1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-DE/P75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-SE/I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
| K4S643233F-SE/N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM |
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