參數(shù)資料
型號(hào): K4S643232F-TI70
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL3.3V
文件頁(yè)數(shù): 11/12頁(yè)
文件大小: 117K
代理商: K4S643232F-TI70
CMOS SDRAM
- 11
SDRAM 64Mb H-die (x32)
Rev. 1.3 February. 2004
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Note :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
50
55
60
70
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS Latency=3
t
CC
5
1000
5.5
1000
6
1000
7
1000
ns
1
CAS Latency=2
10
10
10
10
CLK to valid
output delay
CAS Latency=3
t
SAC
-
4.5
-
5.0
-
5.5
-
5.5
ns
1, 2
CAS Latency=2
-
6
-
6
-
6
-
6
Output data hold time
t
OH
2
-
2
-
2
-
2
-
ns
2
CLK high pulse
width
CAS Latency=3
t
CH
2
-
2
-
2.5
-
3
-
ns
3
CAS Latency=2
3
-
3
-
3
-
3
-
CLK low
pulse width
CAS Latency=3
t
CL
2
-
2
-
2.5
-
3
-
ns
3
CAS Latency=2
3
-
3
-
3
-
3
-
Input setup time
CAS Latency=3
t
SS
1.5
-
1.5
-
1.5
-
1.75
-
ns
3
CAS Latency=2
2.5
-
2.5
-
2.5
-
2.5
-
Input hold time
t
SH
1
-
1
-
1
-
1
-
ns
3
CLK to output in Low-Z
t
SLZ
1
-
1
-
1
-
1
-
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
-
4.5
-
5.0
-
5.5
-
5.5
ns
-
CAS latency=2
-
6
-
6
-
6
-
6
相關(guān)PDF資料
PDF描述
K4S643232E-TI60 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TI60 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
K4S643233F Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
K4S643233H Mobile-SDRAM
K4S643233H-C Mobile-SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232F-TL45 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL50 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL55 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL60 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232F-TL70 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL