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參數(shù)資料
| 型號(hào)： | K4S643232E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | K4S643232E |
K4S643232E
CMOS SDRAM
- 7 -
Rev. 1.3 (Oct. 2001)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C, V
IH(min)
/V
IL(max)
=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit Note
-45
-50
-55
-60
-70
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
o
= 0mA
3
180
175
175
170
155
mA
2
2
150
150
150
150
150
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC2
PS
CKE
&
CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
7
mA
I
CC3
PS
CKE
≤
V
IL
(max), t
CC
=
∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
55
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
40
Operating Current
(Burst Mode)
I
CC4
I
o
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
200
190
190
180
170
mA
2
2
150
150
150
150
150
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
3
195
190
190
185
165
mA
3
2
160
160
160
160
160
Self Refresh Current
I
CC6
CKE
≤
0.2V
3
mA
4
450
uA
5
DC CHARACTERISTICS
1. Unless otherwise notes, Input level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
) in LVTTL.
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232E-TC**
5. K4S643232E-TL**
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643232E-TE70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TC45 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC55 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232E- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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