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參數(shù)資料
| 型號： | K4S643232E-TL60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | K4S643232E-TL60 |
K4S643232E
CMOS SDRAM
- 2 -
Rev. 1.3 (Oct. 2001)
Revision 1.3 (October 24, 2000)
Removed CAS Latency 1 from the spec.
Revision 1.2 (August 7, 2000) -
Target
Added CAS Latency 1
Revision 1.1 (March 14, 2001)
Added K4S643232E-55
Revision 1.0 (October 20, 2000)
Removed Note 5 in page 9. tRDL is set to 2CLK in any case regardless of using AP or frequency
Revision 0.4 (August 24, 2000)
Updated DC spec
Revision 0.3 (August 1, 2000)
Changed the wording of tRDL related note for User’s clear understanding
Revision 0.2 (July 18, 2000) -
Preliminary
Removed K4S643232E-40/55/7C
Changed tSH of K4S643232E-45 from 0.7ns to 1.0ns
Revision 0.0 (March 14, 2000) -
Target Spec.
Initial draft
Revision History
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| K4S643232E-TL70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TN50 | LED ORANGE DIFFUSED 2X5 RECT |
| K4S643232E-TN60 | LED ORG/RED DIFFUSED 2X5MM RECT |
| K4S643232E- | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232E-TL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TN50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TN60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TN70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TP60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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