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參數(shù)資料
| 型號： | K4S643232E-TI70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 117K |
| 代理商： | K4S643232E-TI70 |
CMOS SDRAM
- 3 -
SDRAM 64Mb H-die (x32)
Rev. 1.3 February. 2004
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated
with SAMSUNG
′
s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
512K x 32Bit x 4 Banks SDRAM
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period(4K Cycle)
FEATURES
GENERAL DESCRIPTION
Part No.
Orgainization
Max Freq.
143MHz(CL=3)
166MHz(CL=3)
183MHz(CL=3)
200MHz(CL=3)
Interface
Package
K4S643232H-TC/L70
K4S643232H-TC/L60
K4S643232H-TC/L55
K4S643232H-TC/L50
512K x 32
LVTTL
86pin TSOP(II)
Ordering Information
Row & Column address configuration
Organization
2Mx32
Row Address
A0~A10
Column Address
A0-A7
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| K4S643232F-TI70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V |
| K4S643232E-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232F-TI60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232E-TL45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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