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參數(shù)資料
| 型號(hào)： | K4S643232E-TE60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| 中文描述： | 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL（3.3） |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | K4S643232E-TE60 |
K4S643232E
CMOS SDRAM
- 6 -
Rev. 1.3 (Oct. 2001)
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The V
DD
condition of K4S643232E-45/50/55/60 is 3.135V ~ 3.6V
Notes :
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Pin
Symbol
Min
Max
Unit
Clock
C
CLK
-
4
pF
RAS, CAS, WE, CS, CKE, DQM
C
IN
-
4.5
pF
Address
C
ADD
-
4.5
pF
DQ
0
~ DQ
31
C
OUT
-
6.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643232E-TL45 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL50 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL55 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232E-TE70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
| K4S643232E-TI | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TI60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E-TL45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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