參數(shù)資料
型號(hào): K4S643232C-TL80
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP
中文描述: 200萬(wàn)× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL
文件頁(yè)數(shù): 27/43頁(yè)
文件大?。?/td> 1155K
代理商: K4S643232C-TL80
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 27
Power Up Sequence
: Don't care
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
0
A
10
/AP
DQ
WE
DQM
Precharge
(All Banks)
Auto Refresh
Auto Refresh
Mode Register Set
Row Active
(A-Bank)
BA
1
RAa
RAa
tRP
tRC
High level is necessary
High-Z
High level is necessary
Key
相關(guān)PDF資料
PDF描述
K4S643232C Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70
K4S643232C-TC10 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC55 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
K4S643232C-TC60 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
K4S643232C-TC70 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S643232E 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E- 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232E-TC45 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC50 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E-TC55 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL