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參數(shù)資料
| 型號： | K4S643232C-TL55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 26/43頁 |
| 文件大小： | 1155K |
| 代理商： | K4S643232C-TL55 |
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CMOS SDRAM
K4S643232C
REV. 1.1 Nov. '99
- 26
*Note :
1. All input expect CKE & DQM can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA0~BA1.
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
BA0
0
0
1
1
0
0
1
1
Operation
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Disable auto precharge, leave bank C active at end of burst.
Disable auto precharge, leave bank D active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Enable auto precharge, precharge bank C at end of burst.
Enable auto precharge, precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted.
A10/AP
0
1
BA1
0
1
0
1
0
1
0
1
BA0
0
0
1
1
Active & Read/Write
Bank A
Bank B
Bank C
Bank D
BA1
0
1
0
1
BA0
0
0
1
1
x
Precharge
Bank A
Bank B
Bank C
Bank D
All Banks
A10/AP
0
0
0
0
1
BA1
0
0
1
1
x
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S643232C-TL60 | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| K4S643232C-TL70 | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC |
| K4S643232C-TL80 | Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 8-PDIP |
| K4S643232C | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP 0 to 70 |
| K4S643232C-TC10 | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S643232C-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TL80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232E- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) |
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