- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374282 > K4S641632F (SAMSUNG SEMICONDUCTOR CO. LTD.) Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 PDF資料下載
參數(shù)資料
| 型號： | K4S641632F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 |
| 中文描述： | 64Mbit SDRAM的100萬× 16 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 133K |
| 代理商： | K4S641632F |
K4S641632F
CMOS SDRAM
Rev.0.1 Sept. 2001
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632F-TC**
4. K4S641632F-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit Note
- 50 - 55
-60
- 70 - 75 -1H -1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
160 150 140 115
110 100 100 mA
1
Precharge standby current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
1
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
6
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
3
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
3
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
180 170 160 140
135 110 110 mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
180 170 160 140
135 125 125 mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
1
mA
3
L
400
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S641632F-TC1L | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632H-UL70 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S641632H-UL75 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S641632H-UC60 | D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes |
| K4S641632H-UC70 | DELTA CONN 14POS PLUG W/O INSERT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S641632F-TC1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632F-TC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632F-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632F-TC55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632F-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。