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參數(shù)資料
| 型號： | K4S641632E-TC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mbit SDRAM |
| 中文描述： | 64Mbit SDRAM的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | K4S641632E-TC50 |
K4S641632E
CMOS SDRAM
Rev.0.2 Sept. 2001
The K4S641632E is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16
bits, fabricated with SAMSUNG
′
s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
1M x 16Bit x 4 Banks Synchronous DRAM
Samsung Electronics reserves the right to change products or specification without notice.
*
Bank Select
Data Input Register
1M x 16
1M x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
1M x 16
1M x 16
Timing Register
ORDERING INFORMATION
Part No.
Max Freq.
200MHz(CL=3)
183MHz(CL=3)
166MHz(CL=3)
143MHz(CL=3)
133MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
Interface Package
K4S641632E-TC50/TL50
K4S641632E-TC55/TL55
K4S641632E-TC60/TL60
K4S641632E-TC70/TL70
K4S641632E-TC75/TL75
K4S641632E-TC1H/TL1H
K4S641632E-TC1L/TL1L
LVTTL
54
TSOP(II)
相關PDF資料 |
PDF描述 |
|---|---|
| K4S641632E-TC55 | 64Mbit SDRAM |
| K4S641632E-TC60 | 64Mbit SDRAM |
| K4S641632E-TC70 | 64Mbit SDRAM |
| K4S641632E-TC75 | 64Mbit SDRAM |
| K4S641632E-TL1H | 64Mbit SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S641632E-TC55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM |
| K4S641632ETC60 | 制造商:SAMSUNG 功能描述:* |
| K4S641632E-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM |
| K4S641632E-TC70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM |
| K4S641632E-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM |
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