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參數(shù)資料
| 型號(hào)： | K4S640432H-UC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes |
| 中文描述： | 64兆?芯片與內(nèi)存規(guī)格鉛54 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 144K |
| 代理商： | K4S640432H-UC75 |
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SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.8 August 2004
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632H-TC
4. K4S641632H-TL
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C for x16 only)
Parameter
Symbol
Test Condition
Version
Unit
Note
60
70
75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
140
115
110
mA
1
Precharge standby current in
power-down mode
I
CC2
P
I
CC2
PS
1
1
mA
Precharge standby current in
non power-down mode
I
CC2
N
15
mA
I
CC2
NS
6
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
3
3
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
30
mA
I
CC3
NS
25
Operating current
(Burst mode)
I
CC4
160
140
135
mA
1
Refresh current
I
CC5
160
140
1
400
135
mA
mA
uA
2
3
4
Self refresh current
I
CC6
CKE
≤
0.2V
C
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S640432H-TC | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free |
| K4S640832H-TC75 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free |
| K4S640832H-UL75 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S640832H-TL75 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free |
| K4S640432H-UC | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S640432H-UL75 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S640832C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832C-TC/L10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832C-TC/L1H | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640832C-TC/L1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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