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參數(shù)資料
| 型號： | K4S563233FHN |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | K4S563233FHN |
K4S563233F - F(H)E/N/G/C/L/F
May 2004
12
Mobile-SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
2. BURST LENGTH = 8
Initial Address
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S563233FHN75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S563233F | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S640432D | 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640432E | 4M x 4Bit x 4 Banks Synchronous DRAM |
| K4S640432E-L1H | 4M x 4Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S563233FHN75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S563233H-HN75000 | 制造商:Samsung Semiconductor 功能描述:256 SDRAM X32 FBGA - Trays |
| K4S56323LF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-FE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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