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參數(shù)資料
| 型號： | K4S563233F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | K4S563233F |
K4S563233F - F(H)E/N/G/C/L/F
May 2004
5
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40
°
C/Max 70
°
C, In extended Temp : Max 40
°
C/Max 85
°
C
4. K4S563233F-F(H)E/C**
5. K4S563233F-F(H)N/L**
6. K4S563233F-F(H)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-60
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
110
100
100
90
mA
1
Precharge Standby Current
in power-down mode
I
CC
2P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC
2PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.5
Precharge Standby Current
in non power-down mode
I
CC
2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
20
mA
I
CC
2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
8
Active Standby Current
in power-down mode
I
CC
3P
CKE
≤
V
IL
(max), t
CC
= 10ns
4
mA
I
CC
3PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC
3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
30
mA
I
CC
3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
120
100
90
90
mA
1
Refresh Current
I
CC
5
t
RC
≥
t
RC
(min)
200
180
170
150
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
-E/C
1500
uA
4
-N/L
600
5
-G/F
Internal TCSR
Max 40
Max 85/70
°
C
3
Full Array
450
600
uA
6
1/2 of Full
400
450
1/4 of Full
350
400
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| K4S563233FHN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S563233FHN75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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