參數(shù)資料
型號(hào)： K4S56163LF
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
中文描述： 4米× 16 × 4銀行在54BOC移動(dòng)SDRAM
文件頁(yè)數(shù)： 4/12頁(yè)
文件大小： 114K
代理商： K4S56163LF
K4S56163LF - X(Z)E/N/G/C/L/F
February 2004
Mobile-SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
CAPACITANCE
(V
DD
= 2.5V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
2.0
4.0
pF
RAS, CAS, WE, CS, CKE, DQM
C
IN
2.0
4.0
pF
Address
C
ADD
2.0
4.0
pF
DQ
0
~ DQ
15
C
OUT
3.5
6.0
pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
NOTES :
1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.
Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).
2. VIH (max) = 3.0V AC.The overshoot voltage duration is
≤
3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
4. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
2.3
2.5
2.7
V
V
DDQ
2.3
2.5
2.7
V
1.65
-
2.7
V
1
Input logic high voltage
V
IH
0.8 x V
DDQ
-
V
DDQ
+ 0.3
V
2
Input logic low voltage
V
IL
-0.3
0
0.3
V
3
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-10
-
10
uA
4
相關(guān)PDF資料
PDF描述
K4S56163LF-G 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-L 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-N 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163PF CAP 47UF 350V ELECT EB SMD
K4S56163PF-F90 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S56163LF-F1H 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-F1L 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-F75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-G 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-L 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*