- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374281 > K4S56163LC (SAMSUNG SEMICONDUCTOR CO. LTD.) CAP 680UF 50V ELECT FM RADIAL PDF資料下載
參數(shù)資料
| 型號： | K4S56163LC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP 680UF 50V ELECT FM RADIAL |
| 中文描述： | 16Mx16顯示移動SDRAM 54CSP |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | K4S56163LC |
K4S56163LF - X(Z)E/N/G/C/L/F
February 2004
Mobile-SDRAM
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array.
BA1=0
BA0=0
Partial Self Refresh Area
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is full driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
Partial Array Self Refresh
B. POWER UP SEQUENCE
Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self
refresh cycle automatically according to the two temperature range : Max 40
°
C and Max 85
°
C(for Extended), Max 70
°
C(for
Commercial).
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Temperature Range
Self Refresh Current (Icc6)
Unit
- E/C
- N/L
- G/F
Full Array
1/2 of Full Array
1/4 of Full Array
Max 85/70
°
C
1500
750
750
550
420
uA
Max 40
°
C
500
400
350
- Full Array
- 1/2 Array
- 1/4 Array
相關PDF資料 |
PDF描述 |
|---|---|
| K4S56163LF | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-G | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-L | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-N | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163PF | CAP 47UF 350V ELECT EB SMD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S56163LC-RF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx16 Mobile SDRAM 54CSP |
| K4S56163LF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-F1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S56163LF-F75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
發(fā)布緊急采購，3分鐘左右您將得到回復。