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參數(shù)資料
| 型號(hào)： | K4S561633F-XE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| 中文描述： | 4米× 16 × 4銀行在54BOC移動(dòng)SDRAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | K4S561633F-XE |
K4S561633F - X(Z)E/N/G/C/L/F
February 2004
Mobile-SDRAM
AC OPERATING TEST CONDITIONS
(V
DD
= 2.7V
～
3.6V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
2.4 / 0.4
V
Input timing measurement reference level
0.5 x V
DDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x V
DDQ
V
Output load condition
See Figure 2
VDDQ
1200
870
Output
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Vtt=0.5 x VDDQ
50
Output
30pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
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