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參數(shù)資料
| 型號： | K4S511633C-YL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx16 Mobile SDRAM 54CSP 1/CS |
| 中文描述： | 32Mx16移動SDRAM 54CSP 1/CS |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 61K |
| 代理商： | K4S511633C-YL |
K4S511633C-YL/N/P
Rev. 1.2 Dec. 2002
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
=Commercial, Extended and Industrial)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S511633C-YL**
4. K4S511633C-YN**
5. K4S511633C-YP**
6. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Parameter
Symbol
Test Condition
Version
Unit
Note
-80
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
160
155
145
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
2
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
35
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
15
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
15
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
50
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
45
mA
Operating Current
(Burst Mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
230
210
210
mA
1
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
350
335
305
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
-YL
1800
uA
3
-YN
4
-YP
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S511633F-F1H | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F1L | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F75 | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-L | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-YC | 8M x 16Bit x 4 Banks Mobile SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S511633C-YL/N1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633C-YL/N1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633C-YL/N80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx16 Mobile SDRAM 54CSP 1/CS |
| K4S511633F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
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