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參數(shù)資料
| 型號： | K4S281632M-TC1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 128Mbit SDRAM的200萬× 16 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | K4S281632M-TC1L |
K4S281632M
CMOS SDRAM
Rev. 0.0 Aug. 1999
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-80
-1H
-1L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
130
120
120
115
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min),CS
≥
V
IH
(min),t
CC
=15ns
Input signals are changed one time during 30ns
1
mA
I
CC2
PS
1
Precharge standby current in
non power-down mode
I
CC2
N
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
7
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns.
5
mA
I
CC3
PS
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
t
CCD
= 2CLKs
3
170
145
145
145
mA
1
2
135
145
135
135
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
200
165
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
1.5
mA
3
L
800
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632M-TC**
4. K4S281632M-TL**
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S281632M-L10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-L1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-L1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-L80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-TC | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S281632M-TC80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-TL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-TL10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-TL1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632M-TL1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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