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參數資料
| 型號： | K4S281632D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 128Mbit SDRAM的200萬× 16 × 4銀行同步DRAM LVTTL |
| 文件頁數： | 6/11頁 |
| 文件大小： | 112K |
| 代理商： | K4S281632D |
CMOS SDRAM
K4S281632D
Rev. 0.1 Sept. 2001
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632D-TC**
4. K4S281632D-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
Parameter
Symbol
Test Condition
Version
Unit Note
-55
-60
-7C
-75
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
130
130
110
100
100 100
mA
1
Precharge standby cur-
rent in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
2
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge standby cur-
rent in non power-down
mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
150
150
140
140
130 130
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
220
220
220
200
190 190
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
2
mA
3
L
800
uA
4
相關PDF資料 |
PDF描述 |
|---|---|
| K4S281632D-L1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-L1L | ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No |
| K4S281632D-NC1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-NC60 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-NC75 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4S281632D-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S281632D-L75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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