參數(shù)資料
型號: K4S281632D-L1L
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
中文描述: 128Mbit SDRAM的200萬× 16 × 4銀行同步DRAM LVTTL
文件頁數(shù): 2/11頁
文件大小: 112K
代理商: K4S281632D-L1L
CMOS SDRAM
K4S281632D
Rev. 0.1 Sept. 2001
Revision History
Revision 0.0 (Mar. 06, 2001)
Revision 0.1 (Sep. 06, 2001)
< Before >
5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
< After >
5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Redefined IDD1 & IDD4 in DC Characteristics
Changed the Notes in Operating AC Parameter.
相關(guān)PDF資料
PDF描述
K4S281632D-NC1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NC60 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NC75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NC7C 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NL1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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