參數(shù)資料
型號: K4H643238M-TLA2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mb DDR SDRAM
中文描述: 128MB DDR SDRAM的
文件頁數(shù): 9/53頁
文件大?。?/td> 669K
代理商: K4H643238M-TLA2
- 9 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
1. Key Features
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM/DM for write masking only
Auto & Self refresh
15.6us refresh interval(4K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II package
1.1 Features
1.2 Operating Frequencies
*CL : Cas Latency
Table 1. Operating frequency and DLL jitter
- A2(DDR266A)
133MHz@CL2
-
±0.75ns
- B0(DDR266B)
100MHz
133MHz
±0.75ns
- A0(DDR200)
100MHz
-
±0.8ns
Speed @CL2
Speed @CL2.5
DLL jitter
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