參數(shù)資料
型號： K4H643238D-TLA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb DDR SDRAM
中文描述： 128MB DDR SDRAM的
文件頁數(shù)： 43/53頁
文件大?。?/td> 669K
代理商： K4H643238D-TLA2
- 43 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
8. AC Operating Conditions & Timming Specification
8.1 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
VREF + 0.31
V
V
V
V
1
2
3
4
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.62
0.5*VDDQ-0.2
Note 1. Vih(max) = 4.2V. The overshoot voltage duration is
≤
3ns at VDD.
2. Vil(min) = -1.5V. The undershoot voltage duration is
≤
3ns at VSS.
3. VID is the magnitude of the difference between the input level on CK and the input on CK.
4. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
Table 13. AC operating conditions
I
DD7
: Operating current: Four bank operation
1. Typical Case : Vdd = 2.5V, T=25’C
2. Worst Case : Vdd = 2.7V, T= 10’C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
相關(guān)PDF資料
PDF描述
K4H643238D-TLB0 128Mb DDR SDRAM
K4H643238E-TCA0 128Mb DDR SDRAM
K4H643238E-TCA2 128Mb DDR SDRAM
K4H643238E-TCB0 128Mb DDR SDRAM
K4H563238C-TLA0 10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor, 10 Ch. 28-PLCC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H643238D-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H643238E-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H643238E-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H643238E-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H643238E-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*