參數(shù)資料
型號(hào)： K4H641638B-TLB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb DDR SDRAM
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 33/53頁(yè)
文件大?。?/td> 669K
代理商： K4H641638B-TLB0
- 33 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
4. Command Truth Table
(V=Valid, X=Don
′
t Care, H=Logic High, L=Logic Low)
Table 8. Command truth table
COMMAND
CKEn-1
CKEn
CS
RAS
CAS
WE
BA
0,1
A
10
/AP
A
11,
A
9
~ A
0
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
V
L
Column
Address
(A
0
~A
9
)
4
Auto Precharge Enable
H
4
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
V
L
Column
Address
(A
0
~A
9
)
4
Auto Precharge Enable
H
4, 6
Burst Stop
H
X
L
H
H
L
X
7
Precharge
Bank Selection
H
X
L
L
H
L
V
L
X
All Banks
X
H
5
Active Power Down
Entry
H
L
H
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
Precharge Power Down Mode
Entry
H
L
H
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
L
V
V
V
DM
H
X
X
8
No operation (NOP) : Not defined
H
X
H
X
X
X
X
9
L
H
H
H
9
1. OP Code : Operand Code. A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@EMRS/MRS)
2.EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If both BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank B is selected.
If both BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
5. If A
10
/AP is "High" at row precharge, BA
0
and BA
1
are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
相關(guān)PDF資料
PDF描述
K4H641638C-TCA0 128Mb DDR SDRAM
K4H641638C-TCA2 128Mb DDR SDRAM
K4H641638C-TCB0 128Mb DDR SDRAM
K4H641638C-TLA0 128Mb DDR SDRAM
K4H641638C-TLA2 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H641638C-TCA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H641638C-TCA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H641638C-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H641638C-TLA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H641638C-TLA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
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