• 參數(shù)資料
    型號： K4H641638B-TCA0
    廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述： 128Mb DDR SDRAM
    中文描述： 128MB DDR SDRAM的
    文件頁數(shù)： 39/53頁
    文件大?。?/td> 669K
    代理商： K4H641638B-TCA0
    - 39 -
    REV. 1.0 November. 2. 2000
    128Mb DDR SDRAM
    6. Absolute Maximum Rating
    7. DC Operating Conditions & Specifications
    7.1 DC Operating Conditions
    Parameter
    Symbol
    Value
    Unit
    Voltage on any pin relative to V
    SS
    V
    IN
    , V
    OUT
    -0.5 ~ 3.6
    V
    Voltage on V
    DD
    supply relative to V
    SS
    V
    DD
    , V
    DDQ
    -1.0 ~ 3.6
    V
    Voltage on V
    DDQ
    supply relative to V
    SS
    V
    DDQ
    -0.5 ~ 3.6
    V
    Storage temperature
    T
    STG
    -55 ~ +150
    °
    C
    Power dissipation
    P
    D
    1.0
    W
    Short circuit current
    I
    OS
    50
    mA
    Note :
    Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
    Functional operation should be restricted to recommend operation condition.
    Exposure to higher than recommended voltage for extended periods of time could affect device reliability
    Recommended operating conditions(Voltage referenced to V
    SS
    =0V, T
    A
    =0 to 70
    °
    C)
    Parameter
    Symbol
    Min
    Max
    Unit
    Note
    Supply voltage(for device with a nominal V
    DD
    of 2.5V)
    V
    DD
    2.3
    2.7
    I/O Supply voltage
    V
    DDQ
    2.3
    2.7
    V
    I/O Reference voltage
    V
    REF
    0.49*VDDQ
    0.51*VDDQ
    V
    1
    I/O Termination voltage(system)
    V
    TT
    V
    REF
    -0.04
    V
    REF
    +0.04
    V
    2
    Input logic high voltage
    V
    IH
    (DC)
    V
    REF
    +0.15
    V
    DDQ
    +0.3
    V
    Input logic low voltage
    V
    IL
    (DC)
    -0.3
    V
    REF
    -0.15
    V
    Input Voltage Level, CK and CK inputs
    V
    IN
    (DC)
    -0.3
    V
    DDQ
    +0.3
    V
    Input Differential Voltage, CK and CK inputs
    V
    ID
    (DC)
    0.3
    V
    DDQ
    +0.6
    V
    3
    Input leakage current
    I
    I
    -2
    2
    uA
    Output leakage current
    I
    OZ
    -5
    5
    uA
    Output High Current (V
    OUT
    = 1.95V)
    I
    OH
    -16.8
    mA
    Output Low Current (V
    OUT
    = 0.35V)
    I
    OL
    16.8
    mA
    Notes 1. V
    REF
    is expected to be equal to 0.5*V
    DDQ
    of the transmitting device, and to track variations in the DC level of the same. Peak-to-
    peak noise on V
    REF
    may not exceed 2% of the DC value
    2.V
    TT
    is not applied directly to the device. V
    TT
    is a system supply for signal termination resistors, is expected to be set equal to
    V
    REF
    , and must track variations in the DC level of V
    REF
    3. V
    ID
    is the magnitude of the difference between the input level on CK and the input level on CK.
    Table 10. Absolute maximum ratings
    Table 11. DC operating condition
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    K4H641638B-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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    K4H641638B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
    K4H641638B-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
    K4H641638B-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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