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參數(shù)資料
| 型號： | K4H640438E-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 47/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H640438E-TLA0 |
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- 47 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
11. IBIS: I/V Characteristics for Input and Output Buffers
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
11.1 Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Maximum
Typical High
Minumum
Vout(V)
I
- 220
- 200
- 180
- 160
- 140
- 120
- 100
- 80
- 60
- 40
- 20
0
0.0
0.5
1.0
1.5
2.0
2.5
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
I
Typical Low
Vout(V)
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相關(guān)代理商/技術(shù)參數(shù) |
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| K4H640438E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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| K4H640438M-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H640438M-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H640438M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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