參數(shù)資料
型號: K4H563238M-TLA2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP
中文描述: 128MB DDR SDRAM的
文件頁數(shù): 52/53頁
文件大?。?/td> 669K
代理商: K4H563238M-TLA2
- 52 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
QFC timing on Write operation
QFC on writes is enabled as soon as possible after the clock edge of write command and disabled as soon
as possible after the last DQS-in low going edge.
2
0
1
5
3
4
6
7
Hi-Z
DQS@tDQSSmax
QFC
t
QCSW
*1
t
QCHW min.
Dout 0Dout 1
BL = 2
Write
DQ’S@tDQSSmax
Command
CK
CK
DQS@tDQSSmin
DQ’S@tDQSSmin
2
0
1
5
3
4
6
7
Hi-Z
QFC
t
QCSW
*1
t
QCHW min.
Dout 0 Dout 1
BL = 2
Write
Command
CK
CK
Figure 27. : QFC timing on write operation with tDQSSmax
Figure 28. : QFC timing on write operation with tDQSSmin
*2
t
QCHW max.
*2
t
QCHW max.
1. The value of tQCSW min. is 1.25ns from the last low going data strobe edge to QFC tri-state.
2. The value of tQCSW max. is 0.5tcK from the first high going clock edge after the last low going data strobe
edge to QFC tri-state.
相關(guān)PDF資料
PDF描述
K4H563238M-TLB0 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP
K4H640438A-TCA0 DIODE ZENER SINGLE 500mW 4.3Vz 0.05mA-Izt 0.05 4uA-Ir 2 SOD-123 3K/REEL
K4H1G0438A-TCA0 DIODE ZENER SINGLE 150mW 5.1Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-523 3K/REEL
K4H640838A-TCA0 DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL
K4H280838A-TCA0 DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL
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K4H563238M-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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K4H640438A-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM