參數(shù)資料
型號(hào): K4H563238E-TLB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-SOIC
中文描述: 128MB DDR SDRAM的
文件頁(yè)數(shù): 1/53頁(yè)
文件大小: 669K
代理商: K4H563238E-TLB0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.0
相關(guān)PDF資料
PDF描述
K4H563238M-TCA2 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-SOIC
K4H563238M-TCB0 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-SOIC
K4H563238M-TLA0 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-SOIC
K4H563238M-TLA2 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP
K4H563238M-TLB0 Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H563238M-TCA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238M-TCA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238M-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238M-TLA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238M-TLA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM