參數(shù)資料
型號(hào)： K4H563238D-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb DDR SDRAM
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 49/53頁(yè)
文件大?。?/td> 669K
代理商： K4H563238D-TCB0
- 49 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
11.2 Half strength driver
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
0.0
0.5
1.0
1.5
2.0
2.5
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
Vout(V)
相關(guān)PDF資料
PDF描述
K4H563238D-TLA0 128Mb DDR SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H563238D-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238D-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238D-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238E-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H563238E-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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