參數(shù)資料
型號: K4H560838E-ZCA2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
中文描述: 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝,免費(符合RoHS)
文件頁數(shù): 19/19頁
文件大?。?/td> 171K
代理商: K4H560838E-ZCA2
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
相關PDF資料
PDF描述
K4H560838A-TCA0 DIODE ZENER SINGLE 150mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-523 3K/REEL
K4H560838D-GCA2 DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL
K4H560838D-GCB0 DIODE ZENER SINGLE 150mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-523 3K/REEL
K4H560838D-GCB3 DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL
K4H560838D-GLA2 DIODE ZENER SINGLE 500mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-123 3K/REEL
相關代理商/技術參數(shù)
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K4H560838E-ZCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)