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參數(shù)資料
| 型號(hào)： | K4H560838E-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 14/19頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-TLA0 |
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DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-TLA2 | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC |
| K4H560838E-TLB0 | 128Mb DDR SDRAM |
| K4H560838E-ULB0 | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560838E-ULB3 | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H560838M-TCA2 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-TLA2 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLAA | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLB3 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-UC/LA2 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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