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參數(shù)資料
| 型號(hào)： | K4H560838E-NLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54pin sTSOP（二） |
| 文件頁數(shù)： | 14/19頁 |
| 文件大小： | 171K |
| 代理商： | K4H560838E-NLB3 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
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| K4H560838E-TCA2 | 128Mb DDR SDRAM |
| K4H560838E-TCB0 | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC |
| K4H560838E-TLA0 | 128Mb DDR SDRAM |
| K4H560838E-TLA2 | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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