參數(shù)資料
型號: K4H560838E-GCB3
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 23.72Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-363 3K/REEL
中文描述: 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格60Ball FBGA封裝(x4/x8)
文件頁數(shù): 19/19頁
文件大?。?/td> 171K
代理商: K4H560838E-GCB3
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
相關(guān)PDF資料
PDF描述
K4H560838E-GCC4 DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL
K4H560838E-GCCC DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL
K4H560838E-GLA2 DIODE ZENER TRIPLE ISOLATED 200mW 32.97Vz 5mA-Izt 0.02503 0.05uA-Ir 27 SOT-363 3K/REEL
K4H560838E-NCA2 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
K4J55323QF-GC 256Mbit GDDR3 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838E-GCC4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GCCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)