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參數(shù)資料
| 型號(hào)： | K4H560838D-GLA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-123 3K/REEL |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁(yè)數(shù)： | 17/19頁(yè) |
| 文件大小： | 171K |
| 代理商： | K4H560838D-GLA2 |
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DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR400 devices to ensure proper system perfor-
mance. these characteristics are for system simulation purposes and are guaranteed by design.
Rev. 1.1 August. 2003
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
i
+/- 0.25 V/ns
+50
+50
ps
i
+/- 0.5 V/ns
+100
+100
ps
i
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g
AC CHARACTERISTICS
DDR400
PARAMETER
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
-
-
e,k
Table 1 :
Input Slew Rate for DQ, DQS, and DM
Table 2
:
Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
AC CHARACTERISTICS
DDR400
PARAMETER
SYMBOL
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
V/ns
a, k
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
h
0.4 V/ns
+50
0
ps
h
0.3 V/ns
+100
0
ps
h
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
j
0.4 V/ns
+75
+75
ps
j
0.3 V/ns
+150
+150
ps
j
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838D-GLB0 | DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL |
| K4H560838D-GLB3 | DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL |
| K4H560838E-GCA2 | DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL |
| K4H560838E-GCB0 | DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL |
| K4H560838E-GCB3 | DIODE ZENER TRIPLE ISOLATED 200mW 23.72Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-363 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838D-GLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H560838D-GLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H560838D-NC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560838D-NC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
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