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參數(shù)資料
| 型號(hào)： | K4H560438E-VCA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54 sTSOP與鉛二無（符合RoHS） |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 291K |
| 代理商： | K4H560438E-VCA2 |
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- 10 -
K4H560438D
DDR SDRAM
Rev. 2.2 Mar. ’03
Notes 1. Includes
±
25mV margin for DC offset on V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on
V
REF
, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V
REF
and internal DRAM noise
coupled TO V
REF
, both of which may result in V
REF
noise. V
REF
should be de-coupled with an inductance of
≤
3nH.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.
5. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the dc level of the same.
DDR SDRAM IDD spec table
AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
VREF + 0.31
V
V
V
V
3
3
1
2
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.7
0.5*VDDQ-0.2
Note 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simu
lation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
(V
DD
=2.7V, T
= 10
°
C
)
Parameter
Specification
Address &
Control pins
1.6 V
1.6 V
4.5 V-ns
4.5 V-ns
Data pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
1.2V
1.2V
2.5 V-ns
2.5 V-ns
Overshoot/Undershoot specification
Symbol
64Mx4
Unit
Notes
K4H560438D-GC(L)B3
(DDR333)
90
110
3
25
20
35
55
150
160
180
3
1.5
290
K4H560438D-GC(L)A2,B0
(DDR266A/B)
80
100
3
20
18
30
45
120
135
165
3
1.5
250
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
相關(guān)PDF資料 |
PDF描述 |
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| K4H560438E-VCB0 | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VCB3 | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VLA2 | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560438E-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| K4H560438E-VLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
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