參數(shù)資料
型號: K4H560438E-UCAA
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述: 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)(符合RoHS)
文件頁數(shù): 2/26頁
文件大?。?/td> 291K
代理商: K4H560438E-UCAA
- 2 -
256Mb
Package Dimension
DDR SDRAM
Rev. 2.2 Mar. ’03
(0.90)
(0.90)
DM is internally loaded to match DQ and DQS identically.
Column address configuration
Organization
Column Address
64Mx4
A0-A9, A11
32Mx8
A0-A9
16Mx16
A0-A8
8.0 0
±
0.10
1
±
0
1
±
0
0
0
±
0
0.35
±
0.05
1.10
±
0.10
1
2
3
4
5
6
7
8
9
ENCAPSULANT AREA
8.00
±
0.10
0.80 x 4 = 3.20
0.80 x 2 = 1.60
0.80 x 2 = 1.60
A
B
C
D
E
F
G
H
J
K
L
M
0.80
0
5
1
1
±
0
5
60 - 0.45
±
0.05
0.80 x 8 = 6.40
TOP VIEW
BOTTOM VIEW
(1.80)
0
1
相關(guān)PDF資料
PDF描述
K4H560438E-UCB0 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-UCB3 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-VC 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
K4H560438E-VCA2 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
K4H560438E-VCB0 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560438E-UCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-UCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-ULA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-ULAA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560438E-ULB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)