參數(shù)資料
型號(hào)： K4H560438E-TC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
中文描述： 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格66 TSOP-II
文件頁(yè)數(shù)： 15/26頁(yè)
文件大小： 291K
代理商： K4H560438E-TC
- 15 -
K4H560838D
DDR SDRAM
Rev. 2.2 Mar. ’03
8M x 8Bit x 4 Banks Double Data Rate SDRAM
Absolute Maximum Rating
Parameter
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.5
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to VSS
Voltage on VDD & VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC Operating Conditions
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
= 0 to 70
°
C)
The K4H560838D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 8 bits, fabricated
with SAMSUNG
′
s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up
to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length
and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
GENERAL DESCRIPTION
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
I/O Supply voltage
V
DDQ
2.3
2.7
V
I/O Reference voltage
V
REF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
4
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
4
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.3
V
DDQ
+0.6
V
3
Input crossing point voltage, CK and CK inputs
V
IX
(DC)
1.15
1.35
V
5
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
+ 0.84V
I
OH
-16.8
mA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
- 0.84V
I
OL
16.8
mA
Output High Current(Half strengh driver)
;V
OUT
=
V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver)
;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
相關(guān)PDF資料
PDF描述
K4H560438E-TCA0 128Mb DDR SDRAM
K4H560438E-TCA2 128Mb DDR SDRAM
K4H560438E-TCAA 256Mb E-die DDR SDRAM Specification 66 TSOP-II
K4H560438E-TCB0 Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -40 to 85
K4H560438E-TCB3 256Mb E-die DDR SDRAM Specification 66 TSOP-II
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560438E-TC/LA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II
K4H560438E-TC/LAA 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II
K4H560438E-TC/LB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II
K4H560438E-TC/LB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II
K4H560438E-TCA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*