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參數(shù)資料
| 型號(hào)： | K4H513238E-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 24/53頁(yè) |
| 文件大?。?/td> | 669K |
| 代理商： | K4H513238E-TLA0 |
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- 24 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.6 Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
Command
< Burst Length=4 >
NOP
WRITE A
WRITE b
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
Din A
0
Din A
1
Din B
0
Din B
1
Din B
2
Din B
3
1t
CK
2
0
1
5
3
4
8
6
7
CK
CK
Figure 14. Write interrupted by a write timing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H513238E-TLA2 | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 |
| K4H513238E-TLB0 | 128Mb DDR SDRAM |
| K4H513238M-TCA2 | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC -40 to 125 |
| K4H513238M-TCB0 | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC -40 to 125 |
| K4H513238M-TLA0 | Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC -40 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H513238E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H513238E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H513238M-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H513238M-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H513238M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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