參數(shù)資料
型號(hào): K4H513238C-TCA0
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC 0 to 70
中文描述: 128MB DDR SDRAM的
文件頁(yè)數(shù): 24/53頁(yè)
文件大?。?/td> 669K
代理商: K4H513238C-TCA0
- 24 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.6 Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
Command
< Burst Length=4 >
NOP
WRITE A
WRITE b
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
s
Din A
0
Din A
1
Din B
0
Din B
1
Din B
2
Din B
3
1t
CK
2
0
1
5
3
4
8
6
7
CK
CK
Figure 14. Write interrupted by a write timing
相關(guān)PDF資料
PDF描述
K4H513238C-TCA2 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC 0 to 70
K4H513238C-TCB0 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-SOIC 0 to 70
K4H513238C-TLA0 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-PDIP 0 to 70
K4H513238C-TLA2 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 14-PDIP 0 to 70
K4H513238C-TLB0 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H513238C-TCA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H513238C-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H513238C-TLA0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H513238C-TLA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H513238C-TLB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb DDR SDRAM