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參數(shù)資料
| 型號(hào)： | K4H511638E-TLA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 22/24頁(yè) |
| 文件大?。?/td> | 367K |
| 代理商： | K4H511638E-TLA2 |
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Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H511638E-TLB0 | 128Mb DDR SDRAM |
| K4H510438C-UCA2 | 512Mb C-die DDR SDRAM Specification |
| K4H510438C-UCB0 | 512Mb C-die DDR SDRAM Specification |
| K4H510438C-UCB3 | 512Mb C-die DDR SDRAM Specification |
| K4H510438 | 512Mb B-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H511638E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H511638F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H511638F-LC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H511638F-LC/LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H511638F-LCCCT00 | 制造商:Samsung SDI 功能描述:DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP-II |
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