參數(shù)資料
型號(hào)： K4H511638E-TCA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 串行ADC
英文描述： 8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP
中文描述： 128MB DDR SDRAM的
文件頁(yè)數(shù)： 17/24頁(yè)
文件大?。?/td> 367K
代理商： K4H511638E-TCA2
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system
performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 :
Input Slew Rate for DQ, DQS, and DM
Table 2
:
Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
a, m
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
AC CHARACTERISTICS
DDR266B
DDR200
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
0.67
1.5
e,m
20.0 System Characteristics for DDR SDRAM
相關(guān)PDF資料
PDF描述
K4H511638E-TCB0 128Mb DDR SDRAM
K4H511638E-TLA0 128Mb DDR SDRAM
K4H511638E-TLA2 128Mb DDR SDRAM
K4H511638E-TLB0 128Mb DDR SDRAM
K4H510438C-UCA2 512Mb C-die DDR SDRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H511638E-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638E-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638E-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638E-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification
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