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參數(shù)資料
| 型號(hào)： | K4H511638D-UC2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 366K |
| 代理商： | K4H511638D-UC2 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.5 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
4.5 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
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| K4H511638D-UC3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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