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參數(shù)資料
| 型號： | K4H511638C-ZCB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM |
| 中文描述： | 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H511638C-ZCB3 |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
6.0 Block Diagram (
32Mb x 4
/
16Mb x 8 / 8Mb x 16
I/O x4 Banks)
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
16Mx8/ 8Mx16/ 4Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
CK, CK
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
x8/16/32
x8/16/32
x4/8/16
x4/8/16
LWE
LDM (x4x8)
LUDM (x16)
x4/8/16
DQi
Data Strobe
LDM (x4x8)
LUDM (x16)
DM Input Register
LDM (x4x8)
LUDM (x16)
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| K4H511638A-TCA0 | DIODE ZENER SINGLE 150mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-523 3K/REEL |
| K4H511638B-G | DIODE ZENER SINGLE 200mW 15Vz 0.05mA-Izt 0.05 0.05uA-Ir 11.4 SOD-323 3K/REEL |
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| K4H511638C-UCA2 | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H511638C-ZCCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
| K4H511638C-ZIB3 | 制造商:SAMELECTROM 功能描述: |
| K4H511638C-ZLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
| K4H511638C-ZLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
| K4H511638D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
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