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參數(shù)資料
| 型號： | K4H510838M-TCA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER DUAL COMMON-CATHODE 300mW 6.2Vz 5mA-Izt 0.0645 0.1uA-Ir 2 SOT-23 3K/REEL |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 366K |
| 代理商： | K4H510838M-TCA0 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
6.0 Block Diagram (
16Mb x 8 / 8Mb x 16
I/O x4 Banks)
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
8Mx16/ 4Mx32
8Mx16/ 4Mx32
8Mx16/ 4Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
CK, CK
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
x8/16/32
x16/32
x8/16
x8/16
LWE
LDM (x8)
LUDM (x16)
x8/16
DQi
Data Strobe
LDM (x8)
LUDM (x16)
DM Input Register
LDM (x8)
LUDM (x16)
8Mx16/ 4Mx32
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510838C-UCA2 | 512Mb C-die DDR SDRAM Specification |
| K4H510838C-UCCC | 512Mb C-die DDR SDRAM Specification |
| K4H510838E-TCA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 |
| K4H510838E-TCB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 |
| K4H510838E-TLA0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838M-TCA2 | 制造商:Samsung Electro-Mechanics 功能描述:64M X 8 DDR DRAM, 0.75 ns, PDSO66 |
| K4H510838M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838M-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838M-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838M-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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